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DEVELOPMENT OF TUNNELING-CURRENT-CONTROLLED THIN FILM TRANSISTORS APPLYING SCHOTTKY CONTACTS

应用肖特基接触的隧道电流控制薄膜晶体管的开发

基本信息

批准号：
08555086
负责人：
SHIRAFUJI Junji
金额：
$ 4.48万
依托单位：
FUKUI UNIVERSITY OF TECHNOLOGY (1997)Osaka University (1996)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555086/
关键词：
Schottky Barrier Tunneling Current Thin Film Transistor Polysilicon Leakage Current Silicide Flat Panel Display フラットディスプレイ

项目摘要

We made attempts to develop tunneling-current controlled thin film transistor (TFTs) applying Schottky contacts at source and drain, and obtained the results as follws :(1)Improvements of fabrication process for Schottky contacts in poly-Si TFTsPd silicide which was prepared by evaporating Pd and annealing at 250ﾟC was found to be most suitable for Schottky contacts. However, there was still a problem in which the source/drain was short-circuited to the gate electrode due to the deposited Pd on the side wall of gate insulator. This problem was solved by improving the progress in the following way.・The etching period for removing native oxide before Pd evaporation was increased in order to assure sufficient side-etching of the gate oxide.・The thickness of Pd was minimized to form silicide entirely during the annealing at 250ﾟC.(2)Operation as a p-channel conventional FETAlthough the tunneling-current-controlled TFTs were found to have a high transconductance, a large leakage current was observed because of hole injection from the drain. However, when the TFTs were operated in conventional p-channel FET mode, the hole field-effect mobility as high as 15 cm^2/Vs was achieved with a low leakage surrent. This value can be well compared to those for electrons of 20 cm^2/Vs in conventional n-channel poly-Si TFTs. This result may suggest tunneling-current-controlled mode to be suitable for p-channel FETs with a high transconductance.3)Precise measurement of contact resistance at source/drain with Schottky barrier contact by Gate-Four-Probe methodWe measured precisely the contact resistance at source/drain with Schottky barrier contact using a Gate-Four-Probe method. It was found that the contact resistance decreased exponentially with increasing gate voltage ; this confirmed that the tunneling-current through the Schottky barrier was able to be controlled by gate voltage.

我们尝试在源极和漏极处采用肖特基触点来开发隧道电流控制薄膜晶体管（TFTs），并取得了以下结果：(1)改进了采用蒸发Pd并在250℃下退火制备的聚硅TFTsPd硅化物中肖特基触点的制备工艺，得到了最适合肖特基触点的材料。但是，由于栅极绝缘子侧壁上沉积的Pd，仍然存在源极/漏极短路到栅极的问题。通过以下方式改进进度，解决了这个问题。·增加了Pd蒸发前去除原生氧化物的蚀刻周期，以确保栅极氧化物有足够的侧蚀刻。在250℃的退火过程中，Pd的厚度被最小化以完全形成硅化物。(2)作为p沟道的传统晶体管工作虽然发现隧道电流控制的tft具有高的跨导性，但由于漏极的空穴注入而观察到大的泄漏电流。然而，当TFTs在传统p沟道FET模式下工作时，空穴场效应迁移率高达15 cm^2/Vs，漏电流低。这个值可以很好地与传统n沟道多晶硅tft中20 cm^2/Vs的电子相比较。这一结果可能表明隧道电流控制模式适用于具有高跨导的p沟道场效应管。采用栅极四探针法精确测量了肖特基势垒触点源漏端接触电阻，测量了肖特基势垒触点源漏端的接触电阻。接触电阻随栅极电压的增大呈指数减小；这证实了通过肖特基势垒的隧穿电流可以由栅极电压控制。