METALLIC MULTILAYERS PREPARED ON MICROSTRUCTURES SUBSTRATES

薄膜制备技术的最新发展使得在埃尺度上控制每一层的厚度成为可能，但总的来说，关于平面方向的尺寸和形状是不能控制的。微加工技术在半导体领域颇受欢迎，但尚未完全应用于金属薄膜。本研究的基本思路是通过在微结构衬底上沉积制备新型金属多层膜。在硅表面上制作了V型微槽，并以此为衬底进行沉积。在V型沟槽衬底上制备了非耦合型巨磁电阻(GMR)多层膜，并测量了与电流成平面角的几何形状的GMR。从几何结构上证实了巨磁电阻的增强作用，并证明了微结构衬底的实用性。实验还表明，倾斜沉积可以制备出宽度为0.3微米的磁性微丝，可作为基础磁学研究的模型系统。

Recent developments of thin film preparation techniques have made possible to control each layr thickness on angstrom scale but in general the size and shape regarding to the directions in plane are not controlled. Microfabrication techniques are rather popular in the semiconductor fields but not yet fully applied for metallic films. The basic idea of the present investigation is to prepare new type metallic multilayr films by depositing on microstructured substrates. On Si surfaces, V-shaped micro grooves were fabricated and utilized as substrates for deposition. Non-coupled type GMR (giant magnetoresistance) multilayrs were deposited on V-groove substrates and GMR in the geometry with current in an angle to the plane was measured. The enhancement of GMR was confirmed in the geometry and the utility of microstructured substrate is proved. It was also shown that microwires of magnetic layrs with the width of 0.3mum can be prepared by depositing in a tilted angle, which are of interests as model systems for basis magnetism studies.