SURFACE FINISHING PROCESS USING DIRECTIONALLY ALIGNED SIC WHISKER LAP

本文介绍了一种SiC晶须砂轮，它的晶须垂直于磨削表面。由于SiC晶须的长径比大，直径为0.3-1 μ m，长度为30-50 μ m，因此SiC晶须砂轮具有高性能超精密磨削的特点。研究了定向SiC晶须砂轮的磨料特性，制备了定向SiC晶须固结磨料磨具，并对其研磨性能进行了研究。此外，在过程中使用的清洁剂，以抑制问题的加载和划伤参与固着磨料研磨。用SiC晶须研磨盘进行了研磨试验，用SiC晶须单向排列研磨盘进行了研磨试验。得出了以下结论：（1）明确了研磨载荷和研磨速度的影响。低载荷降低了研磨效率，但获得了更好的表面光洁度。较高的速度会略微改善表面光洁度。(2)研磨过程中的清洗提高了研磨效率。清洗剂对玻璃和硅片的研磨效果显著，但对淬硬模具钢的研磨效果不明显。(3)当使用该清洗剂研磨淬硬模具钢时，产生最佳表面光洁度，表面粗糙度为18 nm Rmax。

Fixed abrasives have been applied for the lapping of hard and brittle materials, such as ceramic, silicon wafer and glass, in order to perform the process automatically at a high production rate.In a previous work, the authors developed a SiC whisker grinding wheel with its whiskers aligned normally to the grinding surface. The SiC whisker wheel is characterized by highperformance ultra precision grinding because of the high aspect ratio of whisker, which is 0.3-1 mu m in diameter and 30-50 mu m in length. The authors have studied the abrasive characteristics of this wheel.In this work, a fixed abrasive lap of aligned SiC whisker was prepared, and its lapping performance was investigated. Moreover, an in-process cleaner was used to suppress the problems of loading and scratching involved in fixed abrasive lapping. The effectiveness of the cleaner in lapping process was examined with a SiC whisker lap.Lapping using a SiC whisker unidirectionally aligned lap was examined. The following conclusions were obtained :(1) The effects of lapping load and speed were clarified. A low load decreases the lapping efficiency but a better surface finish is obtained. A higher speed slightly improves the surface finish.(2) In-process lap cleaning improved the lapping efficiency. Cleaner was found to be remarkably effective for glass and silicon wafer but not for hardened die steel lapping.(3) The best surface finish was produced with a surface roughness of 18 nmRmax when using the cleaner in lapping the hardened die ateel.