Synthesis of enriched silicon for long-lived donor quantum states

我们已经发现了一种使用容易获得的离子注入工具来制造高度富集所需自旋零同位素的硅的方法。这种“半导体真空”对于使用具有革命性能力的数百万注入原子的量子自旋来构建未来的量子计算机设备至关重要。我们已经在原型材料中证明了长寿命的注入供体原子量子态，这是通过耗尽天然硅中的背景自旋而实现的，现在的目标是将富集推向更大的极限。我们将把极端材料集成到功能设备中，这些设备使用电子检测的电子自旋共振来探测异常持久的量子态，并为大规模设备开辟一条短期途径。

We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.