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Development of Double-meatl Layr, Double Sided Silicon Strip Detector

Development of Double-meatl Layr, Double Sided Silicon Strip Detector
双金属层、双面硅条检测器的研制
批准号:
09640363
负责人:
IWATA Yohsei
金额:
$2.11万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998

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中文摘要
翻译
上一财年开发了一种具有高二维分辨率、高耐压和抗辐射性能的双金属层、双面硅条探测器。我们继续为探测器在高能物理实验中的实际应用而开发。我们建造并测试了一个梯子,这是一个工作探测器的最小单元。现代强子对撞机的光束穿越时间非常短,从25 ns到100 ns左右,这与硅探测器中的载流子漂移时间相当。探测器信号应在波束交叉时间内读取。通过计算机模拟研究了考虑辐射损伤的双金属层双面硅条探测器的快速工作和高电荷收集效率。这一结果在德国施洛斯埃尔茂举行的第八届欧洲半导体探测器研讨会上公布。阶梯是由双金属层、双面硅条探测器和前端电子器件制成的。梯子的机械精度应与硅探测器的位置分辨率相媲美。为此,我们开发了精密夹具。我们成功地操作了梯子。该梯子是与美国费米实验室CDF的SVX-II小组合作制造和测试的。
英文摘要
A double-metal layer, double sided silicon strip detector with high two dimensional resolution, high voltage tolerance and radiation hardness was developed in the last fiscal year. We continued the development for the practical use of the detector in high energy physics experiments. We built and tested a ladder which is the minimum unit of a working detector.Modern hadron colliders have very short beam crossing times of 25 ns to 100 ns or so which are comparable to a carrier drift time in a silicon detector. Detector signals should be read within the beam crossing times. The fast operation and the high charge collection efficiency of the double-metal layer, double sided silicon strip detector were studied by computer simulations taking radiation damage into account. The result was presented at the eighth European Symposium on Semiconductor Detectors, Schloss Elmau, Germany.The ladder was fabricated from the double-metal layer, double sided silicon strip detectors and front-end electronics. The ladder should be built with a mechanical accuracy comparable to the position resolution of the silicon detector. We developed precise fixtures for this purpose. We succeeded to operate the ladder. The ladder was fabricated and tested in cooperation with the SVX-II group, CDF, Fermilab, USA.
期刊论文(7)
专著(0)
科研奖励(0)
会议论文
Y.Iwata, T.Ohsugi et al.: "Optimal P-Stop Pattern for the N-side Strip Isolation of Silicon Microstrip Detectors" IEEETransaction on Nuclear Science.Vol.45, No.3. 303-309 (1998)
Y.Iwata、T.Ohsugi 等人:“硅微带探测器 N 侧带隔离的最佳 P 停止模式”IEEETransaction on Nuclear Science.Vol.45,No.3。
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Y.Unno, Y.Iwata, T.Ohsugi et al.: "Evaluation of P-stop Structuresin the N-side of N-on-N Silicon Strip Detector" IEEETransaction on Nuclear Science. Vol.45, No.3. 401-405 (1998)
Y.Unno、Y.Iwata、T.Ohsugi 等人:“N-on-N 硅条探测器 N 侧 P 停止结构的评估”IEEE Transaction on Nuclear Science。
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共 7 条
    Higgs search by means of τ vertex tagging
    • 批准号:
      12640278
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.11万
    • 财政年份:
      2000
    • 负责人:
      IWATA Yohsei
    • 依托单位:
    Study of Radiation Damage of Silicon Mecrostrip Detectors
    • 批准号:
      07640412
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.47万
    • 财政年份:
      1995
    • 负责人:
      IWATA Yohsei
    • 依托单位:
    海外基金