Nanoimprint lithography by combining STM, plasma etching and micromolding

提出了一种高产量的光刻方法，光盘坑与几十纳米和高纵横比的建议和证明。我们已经证明，纳米级的结构可以形成在聚合物抗蚀剂上使用的扫描探针显微镜（SPM）的尖端。在通过扫描隧道显微镜（STM）的尖端的压痕形成直径为20 nm且深度为10 nm的孔的情况下。在通过原子力显微镜（AFM）的尖端的压痕和线扫描形成具有70nm宽和50nm深的沟的情况下。此后，使用氧反应离子蚀刻（RIE）来去除凹进区域中的剩余抗蚀剂。反应离子刻蚀后，深宽比大于1。此外，使用非电解镀镍将蚀刻结构复制到金属中（微模塑）。脱模剂被添加到抗蚀剂中，并且很好地工作以减少抗蚀剂对模具的粘附。金属模具的直径和宽度约为蚀刻结构的直径和宽度的1.5倍。看起来抗蚀剂被电镀溶液侵蚀。

A high-throughput lithographic method for CD pits with several tens nanometers and a high aspect ratio is proposed and demonstrated. We have demonstrated that nanometer-scale structuring can be formed on a polymer resist using the tip of a scanning probe microscope (SPM). In case a hole with 20 nm in diameter and 10 nm deep is formed by the indentation of the tip of a scanning tunneling microscope (STM). In case a ditch with 70 nm in width and 50 nm deep is formed by the indentation and the line scan of the tip of an atomic force microscope (AFM). Thereafter, oxygen reactive ion etching (RIE) is used to remove the remaining resist in the indented areas. After the RIE, the aspect ration is more than one. Moreover, the etching structure is copied into metal (micromolding) using non-electrolytic nickel plating. Mold release agents are added into the resists and worked well to reduce the resist adhesion to the mold. The diameter and the width of the metal molds are about one and a half times those of the etching structures. It seems that the resist is eroded by the plating solution.