Formation and properties of amorphous hydrogenated carbon films with low hydrogen concentration

按顺序确定硬a-C的最佳性能：H膜适合用于熔壁中的保护性使用，硬a-C的热老化行为：H膜由ECR等离子体沉积从CH-D24-D2和Ar测量的混合物中制备。当这些电影因真空下的基底温度升高而升温时，它们释放了Ar、Hyi D22和Hye D2的大数量和氢碳的少量数量，但电影的厚度并没有减少。在他们的气温上升到800摄氏度之后，几乎所有的H-D22-D2都被释放了，微型维克斯-他们的表现很差，但他们仍然很难。用低氢浓缩法进行热处理：H电影给半硬A-C：H电影以半硬A-C电影。添加的Ar到源甲烷气体导致了电影形成，以具有光滑的表面。However，如果原始的硬A-C的硬度：H电影比硅基底的硬度要高得多，在真空下的高温治疗下，会使许多陨石在表面上产生气体效应。极硬的A-C端口大小：H电影被认为足够小，以防止注入气体的影响，但气体的影响破坏电影纹理。“硅基底的清洁程序是有效的，可以防止在热处理期间重复电影的行为。”A-C的正确硬度：在融合墙中保护性使用的H电影被认为是硅基底的一部分。

In order to determine the optimum properties of hard a-C:H films suitable for protective use in fusion wall, thermal erosion behavior of hard a-C:H films prepared by ECR plasma deposition from the mixture of CHィイD24ィエD2 and Ar were measured. When these films were heated with raising the substrate temperature under vacuum, they released Ar, large amount of HィイD22ィエD2 and slight amount of hydrocarbon but the thickness of the films did not decrease. After they were heated up to 800 ℃, almost all HィイD22ィエD2 was released and micro-Vickers-hardness of them decreased but they were still hard. Namely, heat-treatment of hard a-C:H films gives semi-hard a-C:H films with low hydrogen concentration. The addition of Ar to the source methane gas causes the films formed to have smooth surface. However, if the hardness of original hard a-C:H film is much higher than that of silicon substrate, there gives rise to many craters on the surface owing to the Ar gas effusion by heat-treatment under vacuum. The pore size of very hard a-C:H films is considered to be small enough to prevent the effusion of incorporated gasses but the effusion of gases destroy the film textures. The cleaning procedure of silicon substrate is effective to prevent the peering of films during heat-treatment. The proper hardness of a-C:H films for protective use in fusion wall is considered to be that of silicon substrate.