Preparation of functional metal oxide films from aqueous mist using atmospheric pressure glow plasma

为了建立一种新的薄膜制备系统，探索了利用常压辉光等离子体从Zn^2+水雾中制备ZnO薄膜的方法。等离子体反应器是一个管式石英玻璃与双螺旋电极的铜带。使通过振荡器制备的Zn^2+水雾通过在300 ° C下加热的炉、冷却至0 ° C以下的冷凝器，然后在氩气流中通过反应器，随后施加60- 80 W的RF功率以制备APG等离子体。将通过氩气溅射在反应器中形成的ZnO的细颗粒带到在氩气流中在100-200 ° C下加热的衬底的表面上。在不同衬底温度下，在玻璃衬底上获得的所有ZnO薄膜的X射线衍射图案，表明具有纤锌矿结构的优选c轴取向。在制备c轴取向的ZnO薄膜时，使用氩气和彻底去除水蒸气是非常重要的。通过对该方法制备的ZnO薄膜的形貌与简单热解的ZnO薄膜的形貌进行了详细的比较，揭示了等离子体对薄膜形成过程的影响是溅射效应，从而得到超细颗粒和/或团簇。将该结果应用于以下使用类似管式等离子体反应器的大气压溅射方法。在管式反应器的内壁上涂覆氧化锌。将氩气引入反应器中，随后施加60- 80 W的RF功率以制备APG等离子体。在100-400 ℃的不同衬底温度下在玻璃衬底上获得的所有ZnO薄膜的X射线衍射图案表明具有纤锌矿结构的优选c轴取向。

In order to establish a new film preparation system, a search was made for a preparation of ZnO films from Zn^<2+> aqueous mist using atmospheric pressure glow (APG) plasma. The plasma reactor was a pipe type quartz glass with double helical electrodes of copper ribbons. Aqueous mist of Zn^<2+> made by oscillator was passed through the furnace heated at 300ﾟC,condenser cooled to under 0ﾟC and then the reactor in a stream of argon followed by an application of RF power of 60-80W to make APG plasma. Tne fine particles of ZnO formed in the reactor by argon sputtering were brought onto the surface of the substrate heated at 100-200ﾟC in a stream of argon. X-ray diffraction patterns of all ZnO films obtained on glass substrate at various substrate temperature, indicated preferred c-axis orientation with wurtzite structure. It is very important for making c-axis oriented ZnO films that argon gas should be used and the removal of water vapor should be carried out exhaustively. A detailed comparison of the morphologies of ZnO films obtained by this method with that by simple pyrolysis of mist revealed the plasma effect on the film formation process to be sputtering effect to give hyper fine particles and/or clusters. This result was carried over to the following atmospheric pressure sputtering method using similar pipe type plasma reactor. Zinc oxide was coated on inner wall of this pipe type reactor. Argon gas was introduced into the reactor followed by an application of RF power of 60-80W to make APG plasma. X-ray diffraction patterns of all ZnO films obtained on glass substrate at various substrate temperature of 100-400ﾟC indicated preferred c-axis orientation with wurtzite structure.