Development of the Process for Electroplating with Thick Palladium for the Purpose of Suppression of Metallic Allergy
Development of the Process for Electroplating with Thick Palladium for the Purpose of Suppression of Metallic Allergy
批准号:
10650721
负责人:
HAGI Hideki
金额:
$2.18万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
A new electrolyte plating bath has been developed for palladium electroplatingNH D24 D2H D22 D2PO D24 D2 (100kg/m D13 D1, NH D24 D2Cl (25kg/m D13 D1),and pure water (900ml) have been added in the NH D24 D2OH solution (100ml) constrainedPdCl - D22 - D2 (17g). Palladium was electroplated copper substrates at current densities of20- 200a /m D12 D1. The current efficiency for palladium deposition was about 95% at20- 30a /m D12 D1. The plating film at this condition was excellent in luster. The concentration ofhydrogen in the palladium electroplated copper specimens was measured by使用the heat extractionmethod,和palladium plating films found to contain a large amount of hydrogen. From this resultthe inability to obtain thick palladium films is estimated to be the pickup of hydrogen during aplating process,and the deterioration in mechanical properties of the plating film by the hydrogen embrittlement. .then,平台条件和hydrogen concentration是examined. the hydrogenconcentration in the plating film did not depend on film thickness. And the concentration was120mass-ppm at 20a /m D12 D1 and 20-30mass-ppm at current densities larger than 20a /m D12 D1. inorder to reduce the hydrogen concentration in the plating filmthe diffusion coefficient of hydrogenD2H D2 in palladium electroplating films measured by the electrochemical desorption method。The following has been understood as a result. (1) D2H D2 in The palladium plating film wassmaller than D - 2h D2 in palladium bulk. (2) D - 2h D2 became large by heat-treating,and D2H D2 in the plating films heat-treated at high temperatures was identical with D2H D2in the bulk. (3) the main causethat D2H D2 in the plating films was smaller than that in the bulk,was clarified to be a residual strain in the plating film。
英文摘要
A new electrolyte (plating bath) has been developed for palladium electroplating, NHィイD24ィエD2HィイD22ィエD2POィイD24ィエD2 (100kg/mィイD13ィエD1, NHィイD24ィエD2Cl (25kg/mィイD13ィエD1), and pure water (900ml) have been added in the NHィイD24ィエD2OH solution (100ml) constrained PdClィイD22ィエD2 (17g). Palladium was electroplated copper substrates at current densities of 20-200A/mィイD12ィエD1. The current efficiency for palladium deposition was about 95% at 20-30A/mィイD12ィエD1. The plating film at this condition was excellent in luster. The concentration of hydrogen in the palladium electroplated copper specimens was measured by using the heat extraction method, and the palladium plating films were found to contain a large amount of hydrogen. From this result, the inability to obtain thick palladium films is estimated to be the pickup of hydrogen during a plating process, and the deterioration in mechanical properties of the plating film by the hydrogen embrittlement. Then, a relation between the plating condition and the hydrogen concentration was examined. The hydrogen concentration in the plating film did not depend on film thickness. And the concentration was 120mass-ppm at 20A/mィイD12ィエD1 and 20-30mass-ppm at current densities larger than 20A/mィイD12ィエD1.In order to reduce the hydrogen concentration in the plating film, the diffusion coefficient of hydrogen, DィイD2HィエD2 in palladium electroplating films were measured by the electrochemical desorption method. The following has been understood as a result. (1) DィイD2HィエD2 in the palladium plating film was smaller than DィイD2HィエD2 in palladium bulk. (2) DィイD2HィエD2 became large by heat-treating, and DィイD2HィエD2 in the plating films heat-treated at high temperatures was identical with DィイD2HィエD2 in the bulk. (3) The main cause, that DィイD2HィエD2 in the plating films was smaller than that in the bulk, was clarified to be a residual strain in the plating film.
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