Integration of A Semiconductor Optical Modulator for Parallel Information

并行的、光学的信息处理虽然很长，但在能够做计划之后还没有达到实际使用。最好的原因是，用于逻辑运算的空间光调制板不存在，需要开发一种工作在低电压和高速下的透射型平面照明光调制器。我们提出了一种新颖的平面光调制器，它基于管脚附近的电子耗尽，从水平方向施加电压，并制作了用于试验目的的元件。本研究在达到消光比10d B(电压7.5V)和插入损耗8d B和1.2 MHz的基础上，进一步向高性能方向发展。在2001年和2002年，设定了1)提高运算速度，2)降低插入损耗，3)低功耗，4)向大规模集成(1000×1000)发展的目标，并取得了以下结果：1)加速：通过将元件尺寸小型化到60μm角平来减小元件的容量，工作速度可达120 MHz。2)插入损耗：通过对元件结构的部分改进，使插入损耗达到4分贝。3)低功率：由于引脚结反向电压击穿电压低的问题，对其原因进行了分析。4)大规模集成：研究了电子布线方法对微细加工技术、工艺技术和大量像素等方面的改进，为实现1000×1000的大规模集成奠定了基础。

The parallel, optical information processing has not arrived at practical use after being able to do the plan though it is long. As for the best reason, the space light modulation panel used for the logical operation does not exist, and a transmission-type planar-illuminated optical modulator operated at alow voltage and a high speed needs to be developed. We have proposed an original planar optical modulator based on electron depletion near pin junctions which impresses the voltage from horizontal direction, and have made the element for trial purposes. A further making to high performance was researched in this research aiming though the characteristic of the extinct ratio 10dB(7.5V in the voltage) and the insertion loss 8dB and 1.2MHz at the speed had been achieved. In 2001 and 2002 years, the targets such as 1) the speed-up of operation speed, 2) the decrease of insertion-loss, 3) low power consumption and 4) making to the large-scale integration (1000 × 1000) were set, and the following results were achieved.1) Speed-up : The capacity of the element was decreased by miniaturizing the size of the element to 60μm corner level, and operation speed was able to be sped up to 120MHz.2) Insertion loss : The insertion-loss 4 dB was achieved by partially improving the element structure.3) Low electric power : Because it was a problem that the breakdown voltage for the reverse voltage in the pin junction was low, the cause was investigated. It turned out that the diffusion of the Zn atom used as p type impurities was a cause for low breakdown voltage, and designed the measures.4) Large-scale integration : The method of the electric wiring to the improvement of the microfabrication technology and the process technology and a lot of pixels etc. were examined, and the basic technology for making to the large-scale integration was developed though the integration of 1000×1000 was not able to be achieved.