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Integration of A Semiconductor Optical Modulator for Parallel Information

并行信息半导体光调制器的集成

基本信息

批准号：
10650039
负责人：
KUWAMURA Yuji
金额：
$ 1.41万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650039/
关键词：
semiconductor optical modulators spatial light modulators planar-illuminated optical modulators smart pixcel optical computer parallel optical information processing optical logic スマートピクセル

项目摘要

1. Development of planar-illuminated semiconductor optical modulators1-1)Fabrication of a planar-illuminated-type array optical modulator with GaAs system :Fabrication of an array optical modulator into which 10 × 10 elements were integrated monolithically has been achieved. Each element of the array has been made as a planar-illuminated optical modulator composed of 20 sets of pィイD1+ィエD1-n-nィイD1+ィエD1 : GaAs crystal layers. Perfarmance of 10dB extinction ratio for 7.5V variation of the applied voltage is obtained. The insertion loss is 5dB and the oprating speed is 1.5MHz. A capital letter 'K' was displayed as an application of the array optical modulator.1-2) Trial to make a planar-illuminated-type optical modulator element with InGaAsP system :We tried to fabricate a planar-illuminated optical modulator element made of InGaAsP material system. In reality, a planar-illuminated optical modulator element could not be fabricated because of a meltback problem that InGaAs multi-layers dissolve in the solution when re-growth layer of InP is buried. However, fundamental technologies of InGaAs multi-layers crystal growth and fabrication processes so on have been established to make a planar-illuminated-type optical modulator element.2. Deign of a planar-illuminated-type semiconductor optical modulator with multi-quantum well structuresA planar-illuminated-type semiconductor optical modulator using multi-quantum well structure has been designed in form of tranmision type. To realize low oprating voltage, high extinction ratio and low insertion loss, we proposed a structure in which voltage is applied from the transverse direction of quantum wells through p- and n- conductive layers having a comb-shape. Excellent characteristics in a well-designed device can be predicted as follows : 10〜20dB on-off extinction ratio for 5V variation of the applied voltage, insertion loss lower than 2dB and oprating speed higher than several GHz.

1. 平面照明半导体光调制器的发展（1-1）利用砷化镓（GaAs）系统制造平面照明型阵列光调制器：实现了单片集成10 × 10个元件的阵列光调制器的制造。阵列的每个元件都被制成一个平面照明的光调制器，由20组p γ γ γ γ + γ γ γ -n-n γ γ γ + γ γ - D1: GaAs晶体层组成。得到了施加电压在7.5V变化时10dB消光比的性能。插入损耗为5dB，工作速度为1.5MHz。大写字母“K”显示为阵列光调制器的应用。1-2)用InGaAsP材料体系制作平面照明型光调制器元件的尝试：我们尝试用InGaAsP材料体系制作平面照明型光调制器元件。在现实中，由于埋入InP再生长层时InGaAs多层在溶液中溶解的熔回问题，无法制备平面照明光调制器元件。然而，为了制造平面照明型光调制器元件，已经建立了InGaAs多层晶体生长和制造工艺等基础技术。一种多量子阱结构的平面照明型半导体光调制器的设计设计了一种传输型多量子阱结构的平面照明型半导体光调制器。为了实现低工作电压、高消光比和低插入损耗，我们提出了一种从量子阱的横向方向通过梳状p导电层和n导电层施加电压的结构。设计良好的器件具有以下优良特性：当外加电压变化5V时，通断消光比为10 ~ 20dB，插入损耗低于2dB，工作速度高于几GHz。