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Development of Fabrication Technique of Crystals for Advanced Optical Computing

Development of Fabrication Technique of Crystals for Advanced Optical Computing
先进光学计算晶体制造技术的发展
批准号:
13650350
负责人:
YOKOTANI Atsushi
金额:
$1.98万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002

项目摘要

项目成果

YOKOTANI Atsushi的其他基金

相关文献

中文摘要
翻译
采用脉冲激光沉积(PLD)方法制备了钛酸钡晶体薄膜,它是光学计算的重要材料。2001年的实验结果表明,只要采用常规的PLD方法,衬底温度在665℃以上是获得晶态薄膜的必要条件。因此,在2003年的实验中,我们试图通过用相对较弱的紫外光照射基片表面来降低这一温度。用于靶照射的KrF准分子激光被分束器部分分开,以25~100 mJ/cm2的能量照射基片。用X射线衍射仪和扫描电子显微镜(SEM)对得到的薄膜进行了表征,成功地将晶化开始的温度分别降低到了600℃和250℃,光强为25 mJ/cm2。扫描电子显微镜观察表明,薄膜具有较弱的周期性结构,这种周期性结构受衬底取向的影响。综上所述,通过本研究,与常规方法相比,弱紫外光照射衬底可以降低结晶温度。
英文摘要
Crystalline barium titanate thin films which are very important materials for optical computing have been fabricated by the pulsed laser deposition (PLD) method. From the results which were obtained in 2001, it was found that the substrate temperature above 665 C^o was necessary to obtain crystalline films, as long as the conventional PLD was adopted. Therefore, in the experiments performed in 2003, we tried to reduce this temperature by irradiating the surface of the substrate with ultraviolet laser relatively weak intensity.The KrF excimer laser for the target irradiation was partially divided by a beam splitter and irradiated the substrate at a fluence from 25 to 100 mJ/cm^3. The obtained films are characterized with the X-ray diffractometer and the scanning electron microscope (SEM).The temperature at which the crystallization started was successfully reduced to 600^oC and 250^oC for the intensities of 25 mJ/cm^2, respectively. The SEM observation revealed that the obtained films had some weak periodical structures which were influenced by the orientation of the substrate.In summary, through this research, we could reduce the temperature of crystallization by irradiating the substrate with weak ultraviolet laser compared to the conventional method.
期刊论文(21)
专著(0)
科研奖励(0)
会议论文
Tomomi Ito: "Fabrication of Lanthum Fluoride Thin Films By the Pulsed Laser Deposition Method"Memoirs, Faculty of Eng., Miyazaki Univ.. 31. 87-92 (2002)
伊藤智美:“用脉冲激光沉积法制备氟化镧薄膜”回忆录,宫崎大学工程系,31. 87-92 (2002)
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伊藤 智海: "PLD法によるフッ化ランタン薄膜の作製"宮崎大学工学部紀要. 31. 87-92 (2002)
Tomomi Ito:“PLD法制备氟化镧薄膜”宫崎大学工学部通报31. 87-92(2002)。
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共 19 条
    Development of insulator film for penetrating electrodes of layered system LSIs for the next generation
    • 批准号:
      17560288
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      2005
    • 负责人:
      YOKOTANI Atsushi
    • 依托单位:
    Improving of Crystal Quality of Optical Computing Devices
    • 批准号:
      11650328
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.11万
    • 财政年份:
      1999
    • 负责人:
      YOKOTANI Atsushi
    • 依托单位:
    Growth of high quality barium titanate crystals for neuro-computers
    • 批准号:
      07650380
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.34万
    • 财政年份:
      1995
    • 负责人:
      YOKOTANI Atsushi
    • 依托单位: