Research on the Semi-coherent Quantum Transport Simulation for Silicon Nanodevices.

在2001 - 2003财年的研究中，主要获得了以下研究成果。(1)采用虚拟时间的显式求解方法对一维双极晶体管进行了分析。结果表明，显式求解方法对器件分析是有效的。(2)针对纳米级半导体器件，提出了漂移扩散法和蒙特卡罗法的混合模拟方法。(3)建立了基于Bohm量子势和Nelson随机微分方程的蒙特卡罗模拟方法。它成功地分析了一维双势垒共振隧道二极管。(4)成功制备了纳米4端finfet （XMOS）。从电特性的测量出发，论证了Vth控制的实现。(5)提出了具有4端操作的XMOS（所谓的双栅mosfet）的双电荷片模型作为器件模型。成功地建立了考虑速度饱和现象的致密模型的核心部分。通过与器件仿真结果的对比，验证了紧凑模型的有效性。

During the research in the 2001 to 2003 fiscal year, the following research results were mainly obtained.(1) The explicit solving method which used virtual time was employed for the analysis of a 1-dimensional bipolar transistor. It was demonstrated that the explicit solving method is effective for device analysis.(2) The mixing method of drift diffusion and Monte Carlo method was developed for nanoscale semiconductor devices as the simulation technique.(3) The Monte Carlo simulation method using the Bohm's quantum potential and Nelson's stochastic differential equation was developed. It succeeded in the analysis of a 1-dimensional double barrier resonance tunnel diode.(4) Nanoscale 4-terminal FinFETs (XMOS) was successfully fabricated. Realization of Vth control was demonstrated from measurement of the electrical characteristics.(5) The double charge sheet model for XMOS (the so-called double gate MOSFETs) with 4-terminal operations was proposed as the device model. The core portion of the compact model considering velocity saturation phenomenon was successfully developed. The validity of the compact model was confirmed in comparison to device simulation results.