Study of atomistic diffusion, nucleation and cluster formation process of atoms and molecules
Study of atomistic diffusion, nucleation and cluster formation process of atoms and molecules
批准号:
17340091
负责人:
SUTO Shozo
金额:
$10.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007
中文摘要
近年来,由于表面探针显微镜,特别是扫描隧道显微镜(STM)的发展,使观察固体表面上单个原子或单个分子的原子运动成为可能。本研究的第一个目标是了解单原子在沉积8小时后的原子扩散形成团簇的过程。我们观察了Ag原子在Si(111)7x7表面的原子运动和(Ag)n簇在7x7表面电位中的形成过程。发现跳跃速率依赖于最近邻的位置时,扩散是合作的。我们还测量了隧道光谱,发现n=5和6簇具有特定的电子能级。第二个目标是研究底物与吸附质原子或分子之间最弱的相互作用。我们在端氢Si(111)表面观察到并五苯多晶薄膜晶体的双外延结构和可通约性。此外,我们在端氢Si(111)表面观察到阶梯诱导的并五苯薄膜晶体的各向异性生长。在本研究的前期,我们提出了超清洁和原子控制端氢Si(111)-(1x1)表面的工艺,并通过高分辨率电子能量损失谱、原子力显微镜和扫描隧道显微镜揭示了这一工艺。我们还提出了氘端Si(111)表面,并观察了表面声子。第三个目标是研究底物与吸附原子之间的强相互作用。利用STM研究了硅化铂薄层的形成过程和表面结构。现在,我们能够操纵单个原子或分子,然后,我们试着估计簇的大小和电子结构。我们的最终目标是了解簇的形成过程,表面反应,并在原子尺度上形成电子器件。
英文摘要
Recently, it is possible to observe atomistic motion of single atoms or single molecules on solid surfaces due to the development of surface probe microscopy, in particular scanning tunneling microscopy (STM). First goal of this study is to understand a cluster formation process from atomistic diffusion of single atoms, just after deposition up to 8 hours. We observed the atomistic motion of Ag atoms on a Si(111)7x7 surface and the formation process of (Ag)n clusters in a 7x7 surface potentials. It is found that the diffusion is cooperative where the hopping rates depend on the nearest neighbor sites. We also measured the tunneling spectroscopy and found that the n=5 and 6 clusters have a specific electronic energy level: Second goal is to investigate the weakest interaction between substrate and the adsorbate atoms or molecules. We observed two -epitaxial structures of pentacene polycrystalline thin film crystals on a hydrogen-terminated Si(111) surface and commensurabilites. Furthermore, we observed the step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface. In the early stage of this study, we proposed the process for ultra-clean and atomically controlled hydrogen-terminated Si(111)-(1x1) Surface and it is revealed by high resolution electron energy loss spectroscopy, atomic force microscopy and scanning tunneling microscopy. We also propose the deuterium terminated Si(111) surface and observed the surface phonons. Third goal is to investigate the strong interaction between substrate and the adsorbate atoms. Formation process and surface structure of platinum silicide thin layers was studied using STM.Now, we are able to manipulate the single atom or molecule and, then, we try to estimate the cluster size and the electronic structure. Our final goal is to understand the cluster formation process, surface reaction and to form an electronic devices in the atomic scale.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
H:Si(111)-(1×1)表面の初期酸化過程の研究
H:Si(111)-(1×1)表面初始氧化过程研究
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[山川博美, 佐藤妙, 伊藤哲, 中尾登志雄, 島田正浩, 加藤大樹, 加藤大樹, 加藤大樹, 加藤大樹, 加藤大樹, 加藤大樹]
通讯作者:
加藤大樹
Si(111)7×表面で原子数に依存して成長する(Ag)nのSTM解析
(Ag)n 根据 Si(111)7× 表面原子数生长的 STM 分析
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[T. Taoka, H. Kato, T. Yamada, A. Kasuya, S. Suto, T.Tonegawa, A. Agui, 須藤彰三]
通讯作者:
須藤彰三
Step-induced Anisotropic Growth of Pentacene Thin Film Crystals on Hydrogen-terminated Si(111) Surface
氢封端 Si(111) 表面阶梯诱导各向异性生长并五苯薄膜晶体
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima]
通讯作者:
S. Suto and K. Nakajima
水素終端Si(11i)1×1表面に成長したAgナノクラスターのプラズモン
氢封端 Si(11i) 1×1 表面上生长的银纳米团簇的等离子体激元
DOI:
--
发表时间:
2005
期刊:
影响因子:
--
作者:
[加藤大樹, 田岡琢己, 山田太郎, 粕谷厚生, 須藤彰三]
通讯作者:
須藤彰三
Two Epitaxal Structures of Polycrystalline Thin Films Crystals on a Hydrogen Terminated(111) Surface and Their Commensurabilities
氢封端(111)表面多晶薄膜晶体的两种外延结构及其公度性
DOI:
--
发表时间:
2007
期刊:
Physical Review B 76
影响因子:
--
作者:
[S. Nishikata, G. Sazaki, J. T. Sadowski, A. Al-Mahboob, T. Nishihara, Suto, T. Sakurai and K. Nakajima]
通讯作者:
T. Sakurai and K. Nakajima
共 78 条
ELECTRONIC STATES AT SURFACES : HREELS-STM STUDY
-
批准号:08454072
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.8万
-
财政年份:1996
-
负责人:SUTO Shozo
-
依托单位:
RELATION BETWEEN SURFACE ELECTRONIC STATES AND SURFACE PLASMON DISPERSION
-
批准号:06640428
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.28万
-
财政年份:1994
-
负责人:SUTO Shozo
-
依托单位: