RELATION BETWEEN SURFACE ELECTRONIC STATES AND SURFACE PLASMON DISPERSION

表面电子态与表面等离子体色散的关系

• 批准号: 06640428
• 负责人: SUTO Shozo
• 金额: $ 1.28万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06640428/
• 关键词: HREELS; STM; SURFACE PLASMON; 銀単結晶; 高分解能電子エネルギー損失分光

(1) We mada a combined measurement system with a high-resolution electron-energy-loss spectroscopy (HREELS) and a scanning tunnel microscope (STM) ; HREELS-STM.The resolution of the HREELS is 1meV.(2) The surface plasmon energy and dispersion are measured on the silver (111) and (110) surfaces. The plasmon energy at q=0 is observed at 3.69 meV.The dispersion on the (111) surface is quadratic. On the other hand, the dispersion on the (110) surface has anisotropy between [100] and [110] directions. But the measured energy at finite q is scattered with the accuracy of tenths of meV,so that the dispersion curves are not determined correctly.(3) In order to understand the scattering of the measured surface plasmon energy at finite q, we observed the surface morphology by STM.The surfaces are well ordered with steps. The distances are between 5 nm and 60 nm. This step may influence the dispersion at shorter momentum transfer than 0.002 nm^<-1>. The distribution of the steps don't contribute to the scattered surface plasmon dispersion.

(1)我们用高分辨电子能量损失谱仪（HREELS）和扫描隧道显微镜（STM）组成了一个联合测量系统：HREELS-STM，HREELS的分辨率为1 meV。(2)在银（111）和（110）表面上测量表面等离子体激元能量和色散。在q=0处的等离子体激元能量为3.69 meV。（111）面上的色散是二次的。另一方面，（110）面上的色散在[100]和[110]方向之间具有各向异性。但是，在有限q处测量的能量以十分之一meV的精度被散射，因此不能正确地确定色散曲线。(3)为了理解有限q值下测量的表面等离子体能量的散射，我们用STM观察了表面形貌。距离在5 nm和60 nm之间。该步骤可以影响在比0.002nm λ 2更短的动量传递下的色散<-1>。台阶的分布对散射表面等离子体激元色散没有贡献。

项目成果

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Shozo Sudo：“Si(111)7×7 表面上 C^<60> 富烯的振动模式”Jan.J.Appl.Phys.33 (1994)。

C.-W.Hu: "Absorption and Reaction of C^<60> on Si(111)Surtace" Surf.Rev.& Lett.(印刷中).

C.-W.Hu：“C^<60> 在 Si(111) 表面上的吸收和反应”Surf.Rev.& Lett.（印刷中）。

C.-W Hu: "Surtace Structure of 3C-SiC(111)Grown on Si(111)Surface by C_<60> Precursor" Applied Physics Letters. 68. 1253-1255 (1996)

C.-W Hu：“C_<60> 前驱体在 Si(111) 表面上生长的 3C-SiC(111) 的表面结构”应用物理快报。

坂本一之: "Molecular Oxgen Precuvsor on S(111)7×7 Surface" Surfac Science. (1996)

Kazuyuki Sakamoto：“S(111)7×7 表面上的分子氧前体”表面科学 (1996)。

K.Sakamoto, S.Suto and W.Uchida: "Molecular Oxgen Precursor on Si (111) 7x7 Surface" Surface Science. (in press.). (1996)

K.Sakamoto、S.Suto 和 W.Uchida：“Si (111) 7x7 表面上的分子氧前体”表面科学。