Low Damage Thin Film Preparation with a Sputtering Method that Employs an Extremely Strong Magnetic Field

磁控溅射是应用最广泛的一种重要的薄膜制备方法。溅射效率在很大程度上取决于用于确认等离子体的磁场。我们已经开发出一种溅射装置，它使用的磁场大约是传统装置的20倍。在这项研究中，诊断了这种方法产生的等离子体，并进行了几个沉积实验，以阐明这一新技术的特点。其中，我们发现，由于强磁场的作用，高能电子被捕获在靶上方的大范围内，并且这种方法有利于反应溅射。我们还研究了一种面对面的磁控管装置，并表明这种布置可以更有效地利用强磁场。

Magnetron sputtering is one of the most important thin-film preparation methods that is widely used. The sputtering efficiency depends strongly on the magnetic field that is used to confirm the plasma. We have developed a sputtering device that employs a magnetic field about 20 times larger than a conventional one. In this study, the plasma generated by this method was diagnosed, and several deposition experiments were conducted to elucidate the characteristics of this novel technique. Among other things, we found that energetic electrons are trapped in a wide region above the target because of the strong magnetic field, and that this method is advantageous for reacted sputtering. We also studied a face-to-face magnetron device, and have shown that the strong magnetic field can be more effectively utilized by this arrangement.