Development of high photodetection efficiency avalanche photodiode

为了研制具有低暗计数率和高光电探测效率的光子计数器，我们制作了几种雪崩光电二极管（APD），增加了线性倍增层和一个温度可控的低噪声测量系统来测量APD的特性。因此，发现通过使用PIN结Al_ Ga_ As/GaAs APD，小于0.1cps的暗计数率是可能<0.9><0.1>的。另一方面，关于APD的光电检测效率，尚未确认超过90%的效率。

To develop a photon counter with low dark count rate and high photodetection efficiency, we have fabricated several kinds of avalanche photodiodes (APDs) with an additional linear multiplication layer and a temperature-controllable and low-noise measurement system to measure the characteristics of the APDs. Consequently, it was found that dark count rate of less than 0.1 cps is possible by using pin junction Al_<0.9>Ga_<0.1>As/GaAs APDs. On the other hand, with regard to the photodetection efficiency of the APDs, the efficiency of more than 90% has not been confirmed.