Study on control of magnetic properties in ferromagnetic nitride semiconductor nanostructures

采用射频等离子体辅助分子束外延技术在GaN（0001）模板上生长了GaGdN/ AlGaN多双量子阱和GaDyN/ GaN双势垒结构。对于所有样品，在室温下确认了样品的铁磁行为。在GaGdN和GaN量子阱威尔斯中，在GaN激子峰的高能侧观察到了较强的光致发光。对于量子威尔斯厚度为1 nm的GaGdN/ AlGaN结构样品，增强的g因子估计约为60。它比GaN大（g因子：2）。发现GaDyN量子威尔斯阱之间存在层间耦合。纳米结构中的磁性易于控制。

GaGdN/ AlGaN multi-double quantum well and GaDyN/ GaN double barrier structures were grown by radio-frequency plasma-assisted molecular-beam epitaxy on GaN(0001) templates. Ferromagnetic behavior is confirmed for the samples at room temperature for all samples. Strong photoluminescence was observed from both GaGdN and GaN quantum wells at higher energy side of GaN excitonic peak. Enhanced g-factor was estimated to be about 60 for GaGdN/ AlGaN structure sample with quantum wells thickness of 1 nm. It is larger than GaN(g factor : 2). It is found that the interlayer coupling exists between GaDyN quantum wells. It is easy to control magnetic properties in the nanostructures.