High-Field EPR with optical detection in semiconductors

高场EPR和ENDOR与光学检测（高场ODMR）相比，使用微波桥的传统高场EPR有几个优点：更高的灵敏度，允许在非常小的体积内研究低缺陷浓度，并直接关联光学和显微镜特性。我们希望改进我们的72/95 GHz ODMR设置，用于PL-（光致发光）检测EPR/ENDOR，以获得更好的PL-ENDOR光接入腔。此外，我们要调查的结构的P-相关的掺杂剂注入到薄外延层的4 H-和6 H-SiC相对于它们的晶格位置，电子和微观结构，以及伴随的注入缺陷和它们的退火性能。

High-field EPR and ENDOR with optical detection (high field ODMR) can have several advantages over conventional high-field EPR using microwave bridges: Higher sensitivity allowing the investigation of low defect concentrations in very small volumes and direct correlation of optical and microscopical properties. We want to improve our 72/95 GHz ODMR set up for PL-(photoluminescence) detected EPR/ENDOR with respect to better cavities with optical access for PL-ENDOR. Furthermore we want to investigate the structure of P-related dopants implanted into thin epitaxial layers of 4H- and 6H-SiC with respect to their lattice sites, electronic and microscopic structures as well as the accompanying implantation defects and their annealing properties.