Fabrication of atomic layer silicide semiconductor on Si substrates

过渡金属封装硅笼团簇（MSi_n:M=Nb， Mo和W）被认为是制造新型硅化材料的基石，因为它们在沉积过程中表现出高化学稳定性并保持其结构完整性。在这项研究中，我们在Si (100)-2x1衬底上制备了薄的w封装Si簇（WSi_<10>）薄膜。利用扫描透射电镜（STEM）、电子能量损失谱（EELS）和x射线光电子能谱（XPS）研究了膜的结构和电子性能。在500℃的温度下，在WSi_<10>薄膜与Si衬底的界面处形成了厚度为1nm的外延结构。根据XPS测量，WSi10薄膜具有半导体能隙。在Si表面沉积WSi_<10>薄膜，并在500℃下退火制备原子层硅化半导体。

Transition metal encapsulated silicon cage clusters (MSi_n:M=Nb, Mo, and W) have been suggested as building-blocks to fabricate new silicide materials since they exhibit high chemical stability and retain their structural integrity during deposition. In this study, we have fabricated thin W-encapsulated Si cluster (WSi_<10>) films on Si (100)-2x1 substrates. The film structure and electronic properties were investigated using Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS). An epitaxial structure (1nm thick) is formed at the interface between the WSi_<10> films and Si substrates by thermal annealing at 500℃. According to XPS measurements, the WSi10 film has a semiconducting energy gap. Thus, the atomic layer silicide semiconductor was fabricated on Si surfaces by deposition of WSi_<10> films and subsequent annealing at 500℃.