Electrochemical construction of high efficiency copper oxide photovoltaic devices

对溶液配方、电化学异质外延生长和二极管结构进行了热化学设计，用于电化学构建1.3 eV带隙p-CuO/n-ZnO光伏器件，理论转换效率约为28%。具有Si-O缓冲层和n-ZnO层的电沉积定向CuO二极管在开路电压为0.43V时表现出良好的暗整流特性和光伏性能。

Thermochemical design of the solution formulation, electrochemical heteroepitaxial growth, and diode structure for the photovoltaic device have been investigated for electrochemically constructing the 1.3-eV -bandgap-p-CuO/n-ZnO photovoltaic devices with the theoretical conversion efficiency around 28%. The electrodeposited -oriented CuO diode with Si-O buffer and n-ZnO layers revealed an excellent rectification feature in-dark and phovoltaic performance with the open-circuit voltage of 0.43V.