Generation and detection of spin current in p-type nonmagnetic semiconductors
Generation and detection of spin current in p-type nonmagnetic semiconductors
批准号:
23360002
负责人:
MATSUKURA Fumihiro
金额:
$13.4万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31
中文摘要
利用铁磁半导体(Ga,Mn)As/非磁性半导体p-GaAs,我们成功地利用自旋泵浦在p-GaAs中产生自旋电流,并利用反向自旋霍尔效应产生的电压检测自旋电流。我们证明了电压也是由(Ga,Mn)As中的流磁效应引起的,并建立了分离不同来源电压的方法。我们已经证明,该方法适用于金属体系,如Py/Pt双层。
英文摘要
By using a ferromagnetic semiconductor (Ga,Mn)As/nonmagnetic semiconductor p-GaAs, we have succeeded to generate spin current in p-GaAs by spin pumping and to detect it by electrical voltage induced by the inverse spin Hall effect. We have shown that the voltage is also induced by the galvanomagnetic effects in (Ga,Mn)As, and established the method for separating the voltages of different origins. We have shown that the method is applicable to metallic systems such as Py/Pt bilayers.
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Magnetic field angle dependence of the probabilities of electric-field induced magnetization switching
电场感应磁化翻转概率的磁场角度依赖性
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[H.Minami, H.Fukaumi, M.Okubo, 金井俊]
通讯作者:
金井俊
DOI:
10.7567/apex.7.013002
发表时间:
2013
期刊:
Applied Physics Express
影响因子:
2.3
作者:
[Lin Chen;S. Ikeda;F. Matsukura;H. Ohno]
通讯作者:
Lin Chen;S. Ikeda;F. Matsukura;H. Ohno
dc voltages induced by magnetization dynamics in (Ga, Mn)As-based structures
(Ga, Mn)As 基结构中磁化动力学感应的直流电压
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[F. Matsukura, L. Chen, and H. Ohno]
通讯作者:
and H. Ohno
Electromotive forces in (Ga, Mn)As-based structures
(Ga, Mn)As 基结构中的电动势
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[F. Matsukura, L. Chen, C. P. Lin, M. Yamanouchi, and H. Ohno]
通讯作者:
and H. Ohno
Electric field-induced magnetization swithcing in CoFeB-MgO - Static magnetic field angle dependence
CoFeB-MgO 中的电场感应磁化强度转换 - 静态磁场角度依赖性
DOI:
--
发表时间:
2014
期刊:
IEEE Transactions on Magnetism
影响因子:
--
作者:
[S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno]
通讯作者:
and H. Ohno
共 18 条
Ferromagnetic semiconductors codoped with donors and their devices
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批准号:26600068
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.5万
-
财政年份:2014
-
负责人:MATSUKURA Fumihiro
-
依托单位:
Current-induced domain wall motion in ferromagnetic semiconductors
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批准号:20360001
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.9万
-
财政年份:2008
-
负责人:MATSUKURA Fumihiro
-
依托单位:
海外基金