Quantum-dot size, nanostructure and low work function Green devices fabricated by precise position control

利用转移模发射极制造方法和低功函数、环境坚硬的非晶碳薄膜，开发出了高度锐利、均匀的纳米结构转移模发射极阵列（Transfer Mold FEAs, field emitter arrays），以实现高效可靠的真空纳米器件，如功率开关器件和场发射显示器（fed）。与100nm-几微米、50-600 Vper微米和5-100%的常规有限元相比，Transfer Mold有限元的基长、导通场和发射电流波动分别低至41 nm、0.2 vpermicron和1.61%。碱基长度为41 nm，发射电流波动为1.61%，是迄今为止报道的最低值。此外，原位自由基处理的发射波动低至4.5%，而传统的无氧化气氛电阻层FEAs的发射波动为5-100%。

Extremely sharp and uniform nanostructure Transfer Mold FEAs (field emitter arrays) have been developed by using Transfer Mold emitter fabrication method and low work function and environment hard amorphous carbon thin film to realize highly efficient and reliable vacuum nanodevices such as power switching devices and field emission displays (FEDs).Transfer Mold FEAs have the base length, turn-on field and emission current fluctuations of as low as 41 nm,10.2Vpermicron and 1.61%,being compared with 100nm-a few micron,50-600 Vper micron and 5-100% of conventional FEAs. The base length of 41 nm and emission current fluctuations of 1.61% are the lowest values ever reported. Moreover,the emission fluctuations by in-situ radical treatment were as low as 4.5%, being compared with 5-100% for conventional FEAs with resistive layers with no oxidizing atmosphere.