Mechanical Characterization of grain boundary strengthening through TEM in-situ indentation
Mechanical Characterization of grain boundary strengthening through TEM in-situ indentation
批准号:
23560852
负责人:
OHMURA TAKAHITO
金额:
$3.16万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
对Fe-Si双晶进行了TEM原位压缩实验,发现位错通过晶界,没有堆积现象。结果表明,位错反应发生在晶界处。在变形过程中观察到螺杆和边缘两种类型的位错。透射电镜观察得到的载荷-位移曲线表明,以螺杆型为主,流动性越低,流变应力越大。另一数据显示了明显的屈服现象,随后出现了显著的应变软化。在这种情况下,位错密度随屈服后应变的增大而增大。因为在约翰斯顿-吉尔曼模型中,流动应力和位错密度之间的定量关系是可以理解的
英文摘要
TEM in-situ compression test was performed for Fe-Si bicrystal and revealed that dislocations passed through grain boundary without any pile-up. These results suggest that dislocation reaction occurs at grain boundary. We observed two types of dislocations of screw and edge during deformation. Load-displacement curves obtained with TEM observation shows that screw type dominant with lower mobility corresponds to higher flow stress. Another data shows obvious yield phenomenon and subsequently remarkable strain softening. In that case, dislocation density increases with strain after yielding. For the quantitative relationship between the flow stress and dislocation density is understood in the Johnston Gilman model
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具有各种晶格缺陷的金属的压痕诱导塑性
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[PRASANNANKarthika,ATAEEESFAHANIHamed,FRANCISMalar Auxilia,阿部英樹,Natarajan Rajalakshmi, Kaveripatnam S. Dhathathreyan,Dakshinamoorthy Arivuoli,山内悠輔, 大村孝仁]
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ナノインデンテーション法による局所力学挙動解析
使用纳米压痕法进行局部力学行为分析
DOI:
--
发表时间:
2013
期刊:
影响因子:
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作者:
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DOI:
--
发表时间:
2014
期刊:
Phys. Rev. Lett
影响因子:
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作者:
[江村 聡, 井 誠一郎, Xiaohua Min, 土谷 浩一, 鈴木千明,筧幸次,近藤 大介, L. Zhang and T. Ohmura]
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“固溶体元素与位错之间的相互作用”
DOI:
--
发表时间:
2014
期刊:
影响因子:
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作者:
[L. Zhang, N. Sekido and T. Ohmura, 上路林太郎, Akihiro Kikuchi and Hiroyasu Taniguchi, 大村孝仁,張鈴,鈴木拓也,関戸信彰,津崎兼彰]
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Indentation-induced deformation behavior in the vicinity of grain boundary of Fe alloys
Fe合金晶界附近压痕诱发变形行为
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Takashi Takeda, Naoto Hirosaki, Rung-Jun Xie, Koji Kimoto, Mitsuhiro. Saito, T. Ohmura]
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T. Ohmura
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