Light-element semiconductors

研究了脉冲激光沉积BeO和BeZnO薄膜的生长。一个稳定性图构建的结晶BeO薄膜的生长。发现即使在室温下也可以生长结晶膜。可用的合金化的限制，确定为Zn和Be丰富的BeZnO半导体薄膜。X射线剂量学功能进行了评估，在Be掺杂的ZnO薄膜。

The growth of BeO and BeZnO thin films by pulsed laser deposition was studied. A stability diagram was constructed for the growth of crystalline BeO films. It was discovered that it is possible to grow crystalline films even at room temperature. The available alloying limits were determined for both Zn- and Be-rich BeZnO semiconductor films. X-ray dosimetry function was evaluated in Be-doped ZnO films.