In-situ observation of electrochemical deposited thin films by diffraction method

通过X射线衍射法和电子背散射衍射法观察沉积过程中薄膜的晶体取向和残余应力的变化，研究了电化学沉积薄膜的形成机理。对于直流法和脉冲法沉积的铜薄膜，在沉积过程中结晶取向几乎没有变化。另一方面，残余应力从拉伸到压缩变化。铜薄膜的形成机理不符合Volmer-Weber型。

The formation mechanism of the electrochemical deposited thin films was examined by observing the change of the crystalline orientation and residual stress during deposition by the X-ray method and the electron backscatter diffraction method. For the copper thin films deposited by both the direct current method and the pulse method, there were few changes of the crystalline orientation during deposition. On the other hand, the residual stress varied from tensile to compression. It was suggested that the formation mechanism of copper thin films was except the Volmer-Weber type.