The invention of a two-dimensional thermal diode by using a compositionally graded thin film
The invention of a two-dimensional thermal diode by using a compositionally graded thin film
批准号:
23760191
负责人:
NISHIYAMA Takashi
金额:
$2.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012
中文摘要
采用重力辅助脉冲激光烧蚀法(GAPLA)制备了热二极管样品。GAPLA是一种结合脉冲激光沉积和高重力效应的复合梯度薄膜制备方法。本研究的目的是研究薄膜材料的质量梯度对热整流的影响。作为一种适合揭示热整流效应的轻元素和重元素的组合,对B-Bi组成梯度薄膜进行了GAPLA实验。由于硼的重量很轻,其薄膜的残余体积难以控制,也没有实现热整流。然而,在本研究过程中获得的关于包括Si-Fe体系在内的成分梯度薄膜的知识对未来的研究非常有用。
英文摘要
The thermal diode samples are fabricated by the gravity assisted pulse laser ablation method (GAPLA). GAPLA is one of the compositionally graded thin film fabrication methods that is combined pulsed laser deposition and high gravity effect. The purpose of this research is to investigate the thermal rectification by the mass gradient of thin film material. As a combination of a light element and a heavy element suitable for revelation of a thermal rectification effect, the GAPLA experiments of the compositionally gradientthin film of B-Bi were conducted. It is difficult to control the residual volume to the thin film of boron because of its very light weight, and has not resulted in realization of thermal rectification. However, the knowledge about compositionally graded thin films including the Si-Fe system obtained in the process of this research became what is greatly useful for future research.
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