RT spin injection to Si using ferromagnetic insulator

本工作的目的是利用钴铁氧体的自旋过滤效应，在室温下实现对硅的高效自旋注入。采用自由基氧化法和臭氧氧化法制备了无反相边界（APB）和氧缺陷的高质量钴铁氧体。结果表明，径向氧化法和臭氧氧化法制备的Co铁氧体中apb的数量和缺陷密度与热氧化法相似，RT下的自旋过滤效应较10 K时低。

The purpose of this work is to realize the high efficiency spin injection to Si at RT by applying the spin-filter effect of Co ferrite. Two kinds of oxidation method, radical and ozone, were tried to obtain high quality Co ferrite without antiphase boundaries(APB) and oxygen defects which act as the hopping sites for electron conduction. It was found that the number of the density of APBs and defects in the Co ferrite made by the radial and ozone are similar to that by the thermal oxidation and the spin-filter effect at RT was quite low compared with that at 10 K.