Development of lateral polarity AlN/GaN heterostructures for nonlinear optical applications

纤锌矿111-氮化物（GaN和AlN）具有自发和应变诱导的压电极化，导致表面束缚电荷。现在有可能产生周期性图案的横向极性结构，其中薄膜极性的周期性反转将引起极化束缚电荷的变化，从而引起电场的变化。这些极性表面的界面特性对光电和高频器件结构至关重要。我们建议对极性图案结构的界面形成进行全面的研究，这将导致使用亚微米周期性结构GaN， AlN和AlGaN的非线性光频率转换的演示，从而建立此类器件的功能。本研究将为了解图案化极性结构和表面的生长动力学和性质奠定基础。由于极性表面的钝化对内部场至关重要，我们也将重点关注极性图案结构上的介电层。我们开发了一个综合的合作项目，结合了两个领先研究机构的大量专业知识。

The wurtzite 111-Nitrides (GaN and AlN) have both a spontaneous and a strain-induced piezoelectric polarization that result in a surface bound charge. It is now possible to produce periodically patterned lateral polarity structures where the periodic reversal of the polarity of the film will cause a variation in the polarization bound charge and thus the electric field. The interface properties of these polar surfaces are critical for optoelectronic and high frequency device structures. We propose a comprehensive study of interface formation of polarity patterned structures which should result in the demonstration of nonlinear light frequency conversion using sub-¿m periodically structured GaN, AlN and AlGaN, thus establishing the functionality of such devices. This research will establish the background for understanding of the growth dynamics and properties of patterned polar structures and surfaces. Because passivation of the polar surfaces is critical to the internal fields, we will also focus on dielectric layers on the polarity patterned structures. We have developed a comprehensive collaborative program that combines the substantial expertise of two leading research institutions.