Long wavelength GaInNAs Quantum Wells and Quantum Dots for GaAs based lasers up to 1.6 µm

该方案的主要目标是为GaAs上的长波连续激光工作开发新型增益材料。在过去的几年中，GaInNAs材料系统已经开发出高质量的1.3微米垂直表面发射器和边缘发射器，并首次实现了1.5微米范围内的激光器。为了将波长限制提高到1.6微米及以上，以完全覆盖第二电信窗口，必须应对严峻的材料挑战。这些结构需要在三元或四元量子阱中加入高浓度的氮或引入GaInNAs量子点。在这两种情况下，必须开发使非辐射复合率最小化的低温生长条件。重点将是优化适合于实现发射波长为1.55 μ m的垂直腔面发射激光器（VCSEL）和发射波长为1.6 μ m的脊波导激光器的活性材料。基本材料参数（例如GaInNAs/- GaAs异质结构中的能带偏移）和高氮浓度层的结构特性将与E. Umbach小组合作进行研究，并将用于系统的材料和器件优化。对于伯克利C. Chang-Hasnain小组的注入锁定研究，将生长1.3¿m的VCSEL层。

The main goal of the proposal is to develop novel gain materials for long wavelength continuous wave laser operation on GaAs. During the last few years the GaInNAs material system has permitted to develop high quality vertical surface emitters and edge emitters at 1.3 ¿m as well as the first realization of lasers in the 1.5 ¿m range. In order to push the wavelength limit to 1.6 ¿m and beyond to fully cover the second telecom window severe material challenges have to be met. These structures require either the addition of high concentrations of nitrogen or the introduction of GaInNAs quantum dots in ternary or quaternary quantum wells. In both cases low temperature growth conditions minimizing the nonradiative recombination rate have to be developed. The main focus will be on the optimization of active materials suitable for the realization of a vertical cavity surface emitting laser (VCSEL) with an emission wavelength of 1.55 ¿m and ridge waveguide lasers at 1.6 ¿m. Fundamental material parameters (e.g. band offsets in GaInNAs/- GaAs heterostructures) and structural properties of layers with high nitrogen concentration will be investigated in cooperation with the group of E. Umbach and will be used for a systematic material and device optimization. For studies of injection locking in the group of C. Chang-Hasnain at Berkeley, 1.3 ¿m VCSEL layers will be grown.