Transport and magnetism in GaMnN nanowires

最近伯克利大学杨培东小组生产GaMnN细丝的能力的发展为研究一维系统中半导体铁磁性的性质提供了一个独特的机会，这是一个当前热门的问题，因为基于自旋电子学的技术中的信息传输将通过接近一维极限的导线发生。因此，我们将从传输和磁性两个角度着手对GaMnN线材进行基本表征。对于传输表征，将使用高分辨率光刻技术将接触成形到单根导线上，并测量磁阻和传输各向异性属性。同时，SQUID将在导线阵列上进行直接磁性测量，以确定磁性和传输特性之间的相关性。最终，这两种方法将被合并，因为纳米图案霍尔棒将被用作测量单个GaMnN线的磁性的探针。

The recent development of the capability to produce thin GaMnN wires in the Peidong Yang group at Berkeley offers a unique opportunity to study the nature of semiconductor ferromagnetism in one dimensional systems, an issue which is currently topical as the transportation of information in a spintronics based technology will occur via wires that will approach the 1D limit. We will therefore embark on fundamental characterization of GaMnN wires from both a transport and magnetic point of view. For transport characterization, high resolution lithographic techniques will be used to fashion contacts onto a single wire and measure the magnetoresistance and transport anisotropy properties. In parallel, direct magnetic measurements will be performed by SQUID on array of wires to determine the correlations between magnetic and transport properties. Ultimately, the two approaches will be merged, as nano-patterned Hall bars will be used as probes to measure the magnetic properties of a single GaMnN wire.