Artificial atoms from magnetic semiconductors

本研究计划旨在研究隧穿输运量子极限下的磁性和自旋现象。要使用的方法包括MBE生长的垂直隧穿异质结构的基础上II-VI稀磁半导体（DMS），这是使用纳米光刻图案化的大小，其中单电子量子效应管理的运输，并配备了静电门提供电场控制的隧穿过程。该架构将发挥三个重要作用。首先，它将执行三端自旋晶体管的功能，允许过滤由栅极设置选择的任一自旋种类。其次，它将作为量子自旋输运基础研究的理想试验平台，正确理解量子自旋输运对于沿着量子信息处理和量子计算的道路前进至关重要。第三，它将产生一种新的研究范式，用于光学控制电子自旋或光子与电子之间的信息印记，这可以为量子信息技术提供新的方案

This research project proposes to study magnetic and spin phenomena in the quantum limit of tunneling transport. The approach to be used consists of an MBE grown vertical tunneling heterostructure based on II-VI dilute magnetic semiconductors (DMS), which is patterned using nanolithography down to a size where single electron quantum effects govern the transport, and fitted with an electrostatic gate providing for electric field control of the tunneling process. This architecture will fulfill three important roles. First, it will perform the function of a three terminal spin transistor allowing for filtering of either spin species as selected by the gate settings. Second, it will serve as an ideal test bed for fundamental investigations of quantum spin-transport, a proper understanding of which is essential for progressing along the road towards quantum information processing and quantum computing. Third, it will yield a novel research paradigm for optical control of electron spin or information imprint between a photon and an electron, which can provide a new scheme of quantum information technology