AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids

为了更大规模地部署清洁和可持续能源，需要更高效、更有竞争力的转换器解决方案。在这种框架下，与传统的硅技术相比，宽带隙（WBG）技术具有优势。即使这些好处是众所周知的，例如效率和/或转换器占地面积的充分减少，目前SiC过于昂贵，其成本对整体系统成本产生了负面影响。鉴于这种情况，AdvanSiC的目标是在各种MVDC电网应用中生产，测试和验证具有成本效益的高压SiC MOSFET半导体：用于直流换流站的固态断路器，全尺寸风力变流器和全尺寸太阳能逆变器。其目标是通过先进的设计结构和工艺优化来最小化高压碳化硅器件的成本。然后，确保一个免疫和可靠的环境来处理SiC快速瞬态，以及优化被动和冷却系统，以提供不仅在器件级而且在系统级的成本降低。AdvanSiC的主要目标是为中小企业、初创企业和欧洲之间的工业提供关键和新兴技术的行业领导，特别是在提供清洁和负担得起的能源的关键技术方面。

For a larger deployment of clean and sustainable energies more efficient and competitive converter solutions are necessary. In this framework, wide Bandgap (WBG) technology provides benefits compared to conventional silicon technology. Even those benefits are well known, e.g. efficiency and/or sufficient reduction on converter footprint, right now SiC are far too expensive and its cost has a negative impact on overall system cost. In the view of this situation, the objective of AdvanSiC is to produce, test and validate costeffective HV SiC MOSFET semiconductors in various MVDC grid applications: a solid-state circuit breaker for DC converter stations, a full-scale wind converter and a full-scale solar inverter. The aim is to minimize HV SiC device cost by advanced design structures and process optimizations. And afterwards, assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level. The main goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.