TRASiCA:High current 3.3kV SiC Schottky diodes for hybrid modules in traction applications

TRASiCA将展示通过将碳化硅(SIC)功率器件技术集成到现有系统中，可以在牵引行业带来的性能和系统寿命方面的收益。一种将碳化硅功率二极管与最先进的硅沟槽IGBT相结合的“混合碳化硅”功率模块将为DYNEX半导体的客户费尔塔格斯生产，其性能将在葡萄牙里斯本的列车网络上进行基准测试，以对抗当前最先进的硅技术。考虑到市场上没有所需的高电流和高电压(&gt；50A，3.3千伏)器件，该项目中使用的碳化硅二极管代表着重大的创新步骤。因此，模块中使用的二极管将在剑桥微电子公司(Camtronics)内设计，并在华威大学制造，因此它们将专门为其服务的应用而定制。这将在一项详尽的可行性研究之后进行，该研究将比较许多碳化硅二极管技术对目标应用的适用性。

TRASiCA will demonstrate the gains in performance and system lifetime that can be brought about in the traction industry by integrating silicon carbide (SiC) power device technology into existing systems. A ‘hybrid SiC’ power module incorporating SiC power diodes with state-of-the-art Si trench IGBTs will be produced for Dynex Semiconductor’s customer Fertagus, and the performance benchmarked on the train network in Lisbon, Portugal, against the current silicon state-of-the-art. The SiC diodes used within this project represent a significant innovative step, given that devices of the required high current and high voltage (>50A, 3.3 kV) are not available on the market. Therefore, the diodes used within the module will be designed within Cambridge Microelctronics (Camutronics), and fabricated at Warwick University, so that they are specifically tailored for the application they serve. This will come after an exhaustive feasibility study that will compare the suitability of many SiC diode technologies for the target application.