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CMOS compatible nonlinear photonic integrated circuits

CMOS compatible nonlinear photonic integrated circuits
CMOS兼容的非线性光子集成电路
批准号:
DP150104327
负责人:
Prof David Moss
金额:
$52.16万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2015
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2015-01-01 至 2021-08-31

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中文摘要
翻译
从技术、经济和可持续性的角度来看,电信网络的带宽和能源需求正迅速达到危机点。与此同时,硅集成电路的片上互连也遇到了瓶颈。该项目旨在结合八个领先的国际团队的专业知识,开拓与硅技术(互补金属氧化物半导体技术,或CMOS)兼容的非线性光子集成电路,以在芯片上实现用于电信,计算机和基础科学的信号生成,处理和测量的新功能。这些平台有望实现电子学与光子学的集成,并且比现有技术更快、更便宜、更小、更节能。
英文摘要
Bandwidth and energy demands of telecommunications networks are rapidly reaching a crisis point technologically, economically and from a sustainability viewpoint. At the same time, on-chip interconnects for silicon integrated circuits are also reaching a bottleneck. This project aims to combine the expertise of eight leading international groups to pioneer nonlinear photonic integrated circuits compatible with silicon technology (Complementary Metal Oxide Semiconductor technology, or CMOS) to achieve new capabilities on a chip for signal generation, processing and measurement for telecommunications, computers, and fundamental science. These platforms are expected to allow the integration of electronics with photonics and to be faster, cheaper, smaller, and more energy efficient than current technology.
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Breaking the glass ceiling: silicon-nitride (SiN) and doped silica glass for ultra high speed Complementary metal-oxide-semiconductor (CMOS) compatible optical processing and measurement chips
  • 批准号:
    DP110100003
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $23.21万
  • 财政年份:
    2011
  • 负责人:
    Prof David Moss
  • 依托单位:
Silicon All-Optical Nanophotonic Devices for 160Gb/s Systems
  • 批准号:
    DP0987515
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $25.61万
  • 财政年份:
    2009
  • 负责人:
    Prof David Moss
  • 依托单位:
海外基金