Trench Clustered Insulated Gate Bipolar Transistor Manufacturing Process Capacity and Productivity Improvement

Semefab是一家本土的开放式半导体和MEMS传感器设计和制造公司，在苏格兰格伦罗斯拥有三家晶片制造工厂，打算成为一家主流的本土功率半导体制造商。IGBT元件是PEMD开关半导体器件应用的主流。Semefab的申请基于在Semefab的Fab 3在6英寸晶圆上建立专利的、性能领先的1700V沟槽集群式IGBT(TCIGBT)制造能力。这将创造一个适用于主流工业驱动、太阳能、风电场和电动汽车应用的高电流密度、高性能组件，并为更高和更低电压的应用创造一个平台。Semefab电力电子的战略发展目标遵循了我们的信念，即在英国境内建立这种制造能力是明确和现实的需要，以加强关键基础设施，提高英国工业供应链的弹性，并为现有和未来的英国此类设备的用户带来切实的好处。

Semefab,the indigenous, open access semiconductor and MEMs sensor design and manufacturing company with three wafer fabrication facilities in Glenrothes, Scotland, intends to become a mainstream, indigenous manufacturer of power semiconductors.The IGBT component is mainstream in PEMD switching semiconductor device applications. Semefab's application is based around establishing patented, performance leading 1700V Trench clustered IGBT (TCIGBT) manufacturing capability at Semefab in Fab 3 on 6 inch wafers. This will create a high current density, high performance component applicable to mainstream industrial drive, solar, wind farm and electric vehicle applications and create a platform for higher and lower voltage applications.Semefab's strategic development objective for power electronics follows our belief that there is a clear and present need for establishing this manufacturing capability within UK to enhance critical infrastructure, increase UK industrial supply chain resilience and deliver tangible benefits to existing and future UK users of such devices.