InSb Quantum Devices: All-electrically Controlled Electron Spins. (ACES)

尽管存在退相干的挑战，但固态自旋量子比特仍然是利用量子态纠缠的量子器件架构的最佳实际实现之一，这是由于其可以并入现有的电子技术。“量子技术的物理学”在最近的EPSRC物理大挑战调查中被公认为物理科学中最具压倒性的挑战。“需要开发用于固态量子电子学的新材料”是一个突出的高级别要求。量子技术物理也被认为是英国最有潜力的经济影响，如果英国建立一个智力优势，在一个实际的半导体器件中的单电子自旋的所有电气控制将是一个重大突破，英国是在一个独特的位置，以实现由于世界领先的强自旋轨道InSb/AlInSb半导体材料系统。要实现门限制量子结构中单电子操纵的最终目标，有许多关键的垫脚石。我们建议解决GaAs和Si上高度失配的InSb/InAlSb外延的材料生长挑战，并实现世界记录载体迁移率和相关弹道长度，并开发设备能力，供更广泛的英国科学界进行先进的测量和开发。通过一系列标准量子传输设备，这项工作将最终证明电子自旋操纵的潜力（以及因此单独的量子位寻址）通过复杂的多栅极场效应器件中的单个电子的空间平移，使用Rashba自旋-轨道耦合来实现局部自旋状态控制。

Despite challenges with decoherence, solid state spin qubits remain one of the best practical implementations of quantum device architectures that exploit quantum state entanglement, owing to the possibility of incorporation into existing electronics technology. 'Physics for Quantum Technologies' was acknowledged in a recent EPSRC Physics Grand Challenge survey as the most overwhelmingly recognised challenge in the physical sciences. "New materials for solid-state quantum electronics need to be developed" was a highlighted high level requirement. Physics for Quantum Technology was also acknowledged as having the highest potential UK economic impact should the UK establish an intellectual advantage.All electrical control of single electron spins in a practical semiconductor device would be a major breakthrough which the UK is in a unique position to achieve owing to the world lead it has in the strong spin-orbit InSb/AlInSb semiconductor material system. There are a number of key stepping stones to achieving the end goal of single electron manipulation in gate confined quantum structures. We propose to address the material growth challenges of highly mismatched InSb/InAlSb epitaxy on GaAs and Si, and achieve world record carrier mobilities and associated ballistic length, and develop device capability for advanced measurement and exploitation by the wider UK scientific community.Through a series of standard quantum transport devices, this work will ultimately demonstrate the potential for electron spin manipulation (and therefore individual qubit addressing) by the spatial translation of single electrons in complex multiple gate field effect devices, using the Rashba spin-orbit coupling to enable local spin state control.