Exploiting extrinsic passivation on thin film dielectrics for high efficiency silicon solar cells

该项目的目的是开发非本征表面钝化方法，以生产高性能的晶体硅太阳能电池。太阳能电池的效率在很大程度上受到电子和空穴在表面和界面处的复合的限制，其中存在高浓度的材料缺陷。未来几代工业太阳能电池将需要成本有效的技术来生产具有非常低的复合率的半导体-电介质界面。因此，本项目将重点推进化学和场效应钝化技术，以减少表面和界面处的电荷复合损失。这些技术将包括电介质、氢和离子钝化方法，重点是长期耐用性和工业兼容性。改进的硅表面将通过化学去除缺陷位点和稳定外来离子电荷来实现。作为实现这一目标的一种手段，将对最佳沉积和加工技术进行研究。

The aim of this project is to develop methods of extrinsic surface passivation to produce high-performing crystalline silicon solar cells. The efficiency of solar cells is largely limited by the recombination of electrons and holes at surfaces and interfaces, where there is a high concentration of material defects. Future generations of industrial solar cells will require cost effective techniques for producing semiconductor-dielectric interfaces with very low rates of recombination. Therefore, this project will focus on advancing both chemical and field effect passivation techniques to decrease charge recombination losses at surface and interface sites. Such techniques will consist of dielectric, hydrogen and ionic passivation methods, with an emphasis on long-term durability and industrial compatibility. Improved silicon surfaces will be achieved through the chemical removal of defect sites and the stabilisation of extrinsic ionic charges. As a means of achieving the objective, a study of the optimal deposition and processing techniques will be carried out.EPSRC theme: Energy