Novel Techniques for the Monitoring of Space-Bourne Radiation Damage and its Evolution in Silicon Devices for Future Missions

了解辐射损伤及其对成像传感器的影响是空间仪器设计的重要组成部分，对ESA和NASA等组织规划下一代空间任务的科学能力至关重要。通常，当对硅器件（例如电荷耦合器件（ccd）或有源像素传感器（aps））进行辐照时，为了方便起见，器件保持无偏置或最小的器件供电以为器件提供基本偏置。然而，当一个设备在辐照过程中有偏置和成像时，有可能看到由入射粒子撞击设备时的相互作用形成的实时辐射损伤，以及在晶格进入稳定构型后引起的几秒钟和几分钟内的损伤行为。

The understanding of radiation damage and its effects on imaging sensors is an important part of space instrumentation design and is of critical interest to organisations such as ESA and NASA in planning the scientific capabilities of the next generation of space missions.Generally, when performing an irradiation of a silicon device (e.g. Charge Coupled Devices (CCDs) or Active Pixel Sensors (APSs)), the device is left unbiased or with a minimum of the device powered to provide basic bias to the device, for convenience. However, when a device is biased and imaging during irradiation, it is possible to see live radiation damage as it is formed by the incident particle's interaction as it hits the device, and the behaviour of the damage in the seconds and minutes after it is caused as the crystal lattice moves into a stable configuration.