Nanoscale device engineering and plasmon-enhanced light-matter interactions for optically accessible resistive switches

该项目旨在揭示不同体系结构的RRAM中的确切切换机制。利用Di Martino实验室最近实现的过程[8]，我们开发了创新的快速方法来研究灯丝形成过程中单个原子的实时运动。理解开关机构的纳米尺度动力学应该为受控和有效的器件优化提供手段。该项目的最终目标是开发一种具有高耐用性和低编程能量的RRAM设备。这将允许记忆计算的实际应用，开辟通向可持续未来IT的新途径。该项目包括物理实验、设备改造、光学和电学表征、数值模拟和分析描述相结合。对记忆器件进行光学测试，同时缓慢地从关闭状态切换到开启状态(然后再切换回来)。光学响应为精确的原子运动建模提供了数据。到目前为止，RRAM的纳米尺度动力学已经基于暗场光谱数据明确地建模[8]。在这个项目中，我们希望将该方法扩展到拉曼光谱学。到目前为止，我们已经参与了由剑桥大学工程与材料科学系提供的基于NiO、hBN和HfO2的RRAM的测试。在未来，我们计划寻找各种有潜力成为有效记忆开关的新材料。

The project intends to reveal the exact switching mechanism in the RRAMs of various architectures. Using the process recently achieved by the Di Martino Lab [8], we develop innovative fast ways to study real-time movement of individual atoms in the filament formation process. Understanding the nanoscale kinetics of the switching mechanisms should reveal means for the controlled and effective device optimization. An ultimate goal of the project is to develop a RRAM device with high endurance and low programming energy. This would allow for the practical applications of memristive computing, opening up new routes to sustainable future IT. The project involves a combination of physical experiments, equipment modification, optical and electrical characterization, numerical simulation, and analytical description. Memristive devices are tested optically while being slowly switched from OFF to the ON state (and back). The optical response provides data for the modelling of the exact atom movement.So far, the nanoscale kinetics of RRAMs has been explicitly modelled based on the dark field spectroscopy data [8]. In this project we would like to extend the methodology to Raman spectroscopy. So far, we are involved in testing of the RRAMs based on NiO, hBN, and HfO2 which are provided by the Department of Engineering and Material Science of the Cambridge University. In the future, we plan to be pursue various new materials with the potential to become effective memristive switches.