Atomistic simulations of Magnetoresistive Random Access Memory

MRAM是一种很有前途的技术，可以在计算机存储器体系结构的所有级别实现通用的非易失性存储器技术，从寄存器和缓存到批量存储。该项目将结合最先进的自旋动力学和分子动力学建模，确定MRAM器件的最终可扩展性，直至几纳米的极限。我们将研究热磁效应、磁开关动力学以及结构缺陷对器件性能和速度的影响。这可能会导致最佳的器件设计，以实现快速性能，高热稳定性和最终的可扩展性和密度。

MRAM is a promising technology to implement a universal non-volatile memory technology at all levels of a computer memory architecture, from registers and caches to bulk storage. This project will determine the ultimate scalability of MRAM devices down to the few nm limit by combining state-of-the-art spin dynamics and molecular dynamics modelling. We will investigate the role of thermal magnetic effects, magnetic switching dynamics and the role of structural defects on device performance and speed. This may lead to optimal device designs for fast performance, high thermal stability and ultimate scalability and density.