In-situ Investigation of Memristive Effects in Integrated Devices based on 2D Nanomaterials

该项目涉及二维纳米材料的记忆行为研究，如过渡金属二硫族化合物及其异质结构。我们的目标是开发基于这些材料的新技术，然后将其集成到电阻开关存储器（RRAM）器件中。我们也致力于探索新的多终端设备架构和制造技术。这项研究将采用最先进的生长反应器和表征技术，如环境电子显微镜、原位x射线光电子能谱和光谱学。我们的项目符合EPSRC对微电子器件技术以及光电器件和电路研究领域的研究兴趣。

The project involves the study of memristive behaviour in 2D nanomaterials, such as transition metal dichalcogenides and their heterostructures. Our goal is the development of new technologies based on these materials, followed by their integration into resistive switching memory (RRAM) devices. We also aim to explore novel multi-terminal device architectures and fabrication techniques.This research will employ state-of-the-art growth reactors and characterisation techniques, such as environmental electron microscopy, in-situ X-ray photoelectron spectroscopy and optical spectroscopy.Our project aligns with the EPSRC research interest into microelectronic device technology, as well as the optoelectronic devices and circuits research area.