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Quantitative Photoluminescence Imaging of Compound Semiconductors

Quantitative Photoluminescence Imaging of Compound Semiconductors
化合物半导体的定量光致发光成像
批准号:
2282139
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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中文摘要
翻译
化合物半导体器件如太阳能电池、激光器、传感器和量子器件的性能、可靠性和产量关键取决于材料的质量。用于生产线上半导体晶片质量控制的定量和可靠的测量可以提高生产率并减少浪费。半导体材料质量的关键指标是带隙和电荷载流子寿命,这两者都可以使用光致发光光谱进行探测。该项目将致力于开发一种系统,该系统将通过使用压缩传感技术的光谱分辨和时间分辨光致发光映射,实现在线计量的半导体材料的快速空间和光谱表征。该原型的演示将引入新一代在线非接触式工具,用于定量材料表征。
英文摘要
The performance, reliability, and yield of compound semiconductor devices such as solar cells, lasers, sensors and quantum devices is critically dependent on the quality of the material. Quantitative and reliable measurements for quality control of semiconductor wafers at a production line can increase productivity and reduce waste. Key indicators of the quality of a semiconductor material are the band gap and charge carrier lifetime, which can both be probed using photoluminescence spectroscopy. This project will work towards the development of a system that will enable fast spatial and spectral characterisation of semiconductor materials for in-line metrology through spectrally resolved, and time-resolved photoluminescence mapping using a compressed sensing technique. The demonstration of this prototype will introduce a new generation of in-line contactless tools for quantitative material characterisation.
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