Quantum memories with 125Te+ donors implanted in silicon

超导量子比特本质上是超导电路中的集体激发，是实现量子计算的主要平台之一，将给化学、材料科学和安全等多个领域带来革命性的变化。目前，估计需要一百万个超导量子比特来执行足够的纠错操作，但在电路中实现量子存储器将把这个数字减少到数万个量子比特，这在技术上更加可行。现有的量子存储器要么不能在超导量子比特的频率范围内工作，要么它们存储信息的能力太短暂，容易出错。通过在硅衬底中植入碲离子，创建了一个电子自旋系综，该系综集体存储具有长相干时间的量子态。特别是碲离子有望通过在硅样品上制造的超导谐振器以足够的保真度传输信息，该谐振器驱动微波磁场。优化谐振器与自旋综通信的方式将是开发量子存储器的关键。在硅中植入125Te+供体的量子存储器还具有在零磁场下工作的潜在优势，这对于未来实现超导量子比特旁边的量子存储器至关重要。

Superconducting qubits, which are essentially collective excitations in superconductive circuits, are one of the leading platforms for the realisation of quantum computing, which would bring revolutionary changes to multiple fields such as chemistry, materials science and security. Currently, it is estimated that a million superconducting qubits will be needed for performing sufficiently error-corrected operations, but the implementation of a quantum memory in the circuit would reduce that number to the order of tens of thousands of qubits, which is much more technically feasible. Existing quantum memories either do not operate in the frequency range of superconducting qubits or their ability to store information is too short-lived and prone to error. By implanting ions of tellurium in a silicon substrate, an electron spin ensemble is created which collectively stores quantum states with long coherence times. Tellurium ions in particular are expected to allow transfer of information with sufficient fidelity via a superconducting resonator fabricated on the silicon sample, which drives a microwave magnetic field. Optimising the way the resonator communicates with the spin ensemble will be key to developing a quantum memory. Quantum memories with 125Te+ donors implanted in silicon also have the advantage of potentially operating at zero magnetic field, which will be crucial for future implementations of quantum memories next to superconducting qubits.