Non-conventional silicon nitride photonic devices for applications in quantum information

硅（Si）平台支持了集成电路[1]上光量子信息处理（QIP）的快速发展，虽然它具有许多理想的特性，如高光约束和电信波长的透明度，但它遭受了不可接受的损失水平。氮化硅（SiN）已被证明具有硅所提供的许多理想的光学特性，但它的大带隙有效地抵消了电信波长的任何双光子吸收（TPA），导致相对较低的损耗[2]。钛酸钡（BTO）的大Pockels系数已在[3]中显示，当与SiN一起制造时，可以在环形谐振器中提供高速，低功率的光学调制，如果BTO中存在显着的非线性相互作用，这可能为高质量，低足迹片上源铺平道路。如果要仔细研究SiN平台，了解其组成可以进一步优化其光学特性。Si3N4是最稳定的形式，但富硅的SiNx已被证明具有增强的非线性性质[4]。对不同的组成和任何非线性增强背后的潜在机制的全面研究将有助于将SiN作为光学QIP平台的发展。

The silicon (Si) platform has supported rapid growth in the development of optical quantum information processing (QIP) on integrated circuits [1] and while it possess many desirable properties such as high optical confinement and transparency at telecom wavelengths, it suffers from unacceptable levels of loss. Silicon nitride (SiN) has been shown to host many of the desirable optical properties that Si offers but it's large bandgap effectively negates any two photon absorption (TPA) at telecom wavelengths resulting in comparatively lower levels of loss [2]. The large Pockels coefficient of barium titanate (BTO) has been shown in [3] to offer high-speed, low power optical modulation in ring resonators when fabricated in conjunction with SiN and if significant non-linear interactions are present in BTO, this could pave the way for high quality, low foot print on-chip sources. If a SiN platform is to be perused, an understanding of its composition could allow further optimisation of its optical properties. Si3N4 is the most stable form but silicon-enriched SiNx has been shown to have enhanced non-linear properties [4]. A comprehensive study into different compositions and the underlying mechanisms behind any non-linear enhancements would aid the development as SiN as a platform for optical QIP.