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Integrated Colloidal Quantum Dot (QD) smart optoelectronic devices for the Internet of Things (IoT)

Integrated Colloidal Quantum Dot (QD) smart optoelectronic devices for the Internet of Things (IoT)
用于物联网 (IoT) 的集成胶体量子点 (QD) 智能光电器件
批准号:
2433330
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2020
资助国家:
英国
项目状态:
未结题
起止时间:
2020 至 --

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中文摘要
翻译
胶体量子点和基于量子点的光电子器件作为光源(LED)和信息传输器(光电晶体管)是物联网(IoT)应用的很有前途的候选器件。由于其可定制的带隙(依赖于尺寸和成分)、溶液可加工性、强烈的光-物质相互作用,CdSe和PbS量子点已经在LED和太阳能电池中显示出显著的效果。根据Touch Display,Research和IDTex最近估计,到2026年,整个QD市场将达到108亿美元。然而,在这些多功能的溶液加工材料可以很好地集成到物联网技术中之前,必须摆脱镉和铅等有毒元素,并全面了解基本的物理/化学知识。在这里,我们将新的加工技术(连续流)与先进的显微镜和光谱技术相结合,开发出功耗最低、能源供应可持续的量子化物联网,主要有三个主要目标:i)开发基于I-III-VI和I-II-III-VI化合物半导体(CuInS2和CuZnInS3)的无镉窄电致发光带宽量子化LED;II)开发基于I-III-VI和I-II-III-VI化合物半导体(CuInS2和CuZnInS3)的高灵敏度量子化光电晶体管(CuInS2和CuZnInS3)。Iii)使用超快光谱了解(I)和(Ii)中关键的光致电荷传输和激子动力学。结果将是基于量子点的整个溶液处理集成物联网模块的演示。
英文摘要
Colloidal QD and QD-based optoelectronic devices are promising candidates for the Internet of Things (IoT) applications, as both light-source (LED) and information transmitters (phototransistors). Benefiting from their customisable bandgap (size-dependent and composition-dependent), solution processability, strong light-matter interaction CdSe and PbS QDs have already shown remarkable results in LEDs and solar cells. According to Touch Display, Research and IDTex recently estimated that the overall QD market would reach $10.8 billion by 2026. However, it is essential to get away from toxic elements such as Cd and Pb, and obtain a comprehensive understanding of underlying physics/chemistry before these versatile and solution-processed materials can be well-integrated into IoT technology. Here, we combine new processing technologies (continuous-flow) with advanced microscopy and spectroscopy techniques to develop QD IoTs with minimum power consumption and sustainable energy supplies, in three key objectives: i) Development of Cadmium-free narrow electroluminescence bandwidth QD LEDs based on I-III-VI and I-II-III-VI compound semiconductors (CuInS2 and CuZnInS3) ii) Development of high-sensitivity QD Phototransistors based on I-III-VI and I-II-III-VI compound semiconductors (CuInS2 and CuZnInS3). iii) Understanding of key light-induced charge transport and exciton dynamics in (i) and (ii) using ultrafast spectroscopy.The outcome will be a demonstration of an entire solution-processed integrated IoT module based on QDs.
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