MBE-grown 1550-nm III-V quantum-dot materials and devices on Si substrate for Si photonic systems

最近，在加的夫和UCL之间的硅衬底上成功地实现了高性能的电泵浦1300 nm量子点激光器。将III-V/Si量子点激光器的激光波长提高到最理想的1550 nm的通信波长将是外延生长的下一个挑战。本项目将在我们的技术基础上开发1550 nm量子点激光器，包括硅基和Ge基1300 nm InAs/GaAs量子点激光器，GaAsSb变质型1550 nm量子点[AppL.太棒了。让我们来吧。92,111906(2008年)]和传统的基于InP的1550 nm量子点。一旦实用化的1550 nm III-V/Si量子点器件被证明是可行的，我们将为硅光子系统研究光子器件与硅波导的集成，从而进一步实现与硅微电子的集成。该方法将集中于开发新的生长技术，使用新的外延设备，在UCL EEE部门的InGaAsP/InP，InAlGaAs/InP和GaAsSb/GaAsSb量子点系统上进行分子束外延，在LCN使用器件处理设备，并在UCL的ATM和STM上研究光学和结构特性。

Recently high performance electrically pumped 1300-nm quantum-dot lasers have been successfully demonstrated on Si substrate between Cardiff and UCL. Pushing the lasing wavelength of III-V/Si quantum-dot laser to most desirable telecom wavelength of 1550 nm will be next challenge for epitaxial growth. 1550-nm quantum-dot laser will be exploited in this project based on our techniques on Si-based and Ge-based 1300-nm InAs/GaAs quantum-dot lasers, GaAs-based GaAsSb metamorphic 1550-nm quantum dots [Appl. Phys. Lett. 92, 111906 (2008)] and conventional InP-based 1550-nm quantum dots. Once practical 1550-nm III-V/Si quantum-dot device having been demonstrated, the integration of photonic component with Si waveguides will be studied for Si Photonic System, hence further integration with Silicon microelectronics. The methodology will focus on exploiting novel growth techniques by using new epitaxial facility, Molecular Beam Epitaxy on InGaAsP/InP, InAlGaAs/InP, and GaAsSb/GaAs quantum-dot system at UCL EEE department, device-processing facilities at LCN, and study the optical and structural properties by ATM and STM at UCL.