Simulation of excitonic Rydberg states in cuprous oxide

这个项目的目的是开发半导体激子态物理的计算机模拟。具体来说，我们的目标是进行从头计算的激子在高的准粒子波函数扩展到许多晶格位置的高能级的属性。使用的方法将包括密度泛函理论以及电子结构的分析和半分析模型。该项目支持在达勒姆和其他地方的实验工作。

The aim of this project is develop computer simulations of the physics of excitonic states in semiconductors. Specifically we aim to perform ab-initio calculation of the properties of excitons in high-lying energy levels where quasi-particle wavefunction extends over many lattice sites. Methods used will include density functional theory as well as analytic and semi-analytic models of electronic structure. The project supports experimental work in Durham and elsewhere.