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High Frequency Power Conversion Using Wide Band-Gap Semiconductors

High Frequency Power Conversion Using Wide Band-Gap Semiconductors
使用宽带隙半导体的高频功率转换
批准号:
2639282
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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中文摘要
翻译
宽带隙(WBG)半导体为电力电子系统的设计者提供了许多潜在的好处。较低的开关损耗允许在较高的开关频率下运行,这在原则上允许在许多转换器应用中减少无源元件的值。然而,在更高的开关频率下高效运行需要更高的电压和电流转换率。在传统的封装和电路结构中,寄生电感和电容会降低转换器的性能,降低效率,并增加系统发出的电磁干扰(EMI)。在整流单元之外,快速的电压转变可能导致高得不可接受的传导和辐射EMI水平。为了减轻传统模块中的这些影响,开关速度通常被故意限制,使用WBG技术的潜在好处无法完全实现。因此,需要新的方法,从分立组件的组件(每个组件都是单独设计和封装的)转变为完全集成的组件,包括功率设备、栅极驱动器、过滤器、传感和控制功能。该研究项目将研究适用于100s W至100s kW系统功率级别的封装中转换器(CIP)模块的设计和实现,将独立的整流单元与紧密耦合的栅极驱动、输入/输出滤波和降低的EMI相结合。有可能进行详细研究的领域包括:1。高频运行的变流器拓扑和控制设计2。无源元件的设计与实现。高频紧凑型变流器的组装和制造方法4。电路布局和EMI抑制策略
英文摘要
Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in many converter applications. However, efficient operation at higher switching frequencies requires increased voltage and current transition rates. With conventional packaging and circuit construction, parasitic inductance and capacitance can deteriorate converter performance, reducing efficiency and adding to the electromagnetic interference (EMI) emitted from the system. Outside the commutation cell, fast voltage transitions may lead to unacceptably high levels of conducted and radiated EMI. To mitigate these effects in conventional modules, switching speeds are often deliberately limited and the potential benefits of using WBG technologies cannot be fully realized. New approaches are thus required, moving from assemblies of discrete components, each of which is designed and packaged separately, to fully integrated assemblies comprising power devices, gate drives, filters, sensing, and control functions. The research project will examine the design and realization of Converter-in-Package (CiP) modular blocks for system power levels from 100s W to 100s kW, incorporating individual commutation cells with close-coupled gate drives, input/output filtering and reduced EMI. Potential areas with scope for detailed investigation include: 1. Converter topology and control design for high frequency operation2. Passive component design and realization3. Assembly and manufacturing methods for high frequency compact converters4. Circuit layout and EMI mitigation strategies
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