To develop and characterise quantum dot based single photon emitters that operate in the telecoms C-band

这个博士项目的目的是开发和验证在电信C波段工作的基于量子点的单光子发射器。该项目将重点关注InAs/GaAs和InAs/Si量子点结构，其最初目标是隔离和表征量子点。从这些结构中，将制造光学或电学注入电荷载流子的结构，目的是在O波段产生和验证单光子发射。在此之后，该项目将专注于将铋等原子注入量子点，以利用带反交叉将发射波长移动到C波段。该项目将主要是实验性的，但也需要对结构进行计算建模。

The aim of this PhD project is to develop and characterise quantum dot based single photon emitters that operate in the telecoms C-band. The project will focus on InAs/GaAs and InAs/Si quantum dot structures with the initial aim of isolating and characterising the dots. From these, structures will be fabricated to optically or electrically inject charge carriers with the aim of producing and verifying single photon emission in the O-band. Following this, the project will focus on implanting atoms such as bismuth into the quantum dots to take advantage of band anti-crossing to move the emission wavelength into the C-band. The project will primarily be experimental in nature but will also require computational modelling of the structures.&&